Cubic paraelectric (nonferroelectric) perovskite PLT thin films with high permittivity for ULSI DRAMs and decoupling capacitors

Author

Dey, Sandwip K. ; Lee, Jong-Jan

Author_Institution

Dept. of Chem.-Bio & Mater. Eng., Arizona State Univ., Tempe, AZ, USA

Volume

39

Issue

7

fYear

1992

fDate

7/1/1992 12:00:00 AM

Firstpage

1607

Lastpage

1613

Abstract

Polycrystalline paraelectric perovskite thin films in the Pb-La-Ti-O or PLT (28 mol.% La) system have been studied. Thin (0.5-μm) films were integrated onto 3-in Pt/Ti/SiO₂/(100) Si wafers by the sol-gel processing technique. Low-field dielectric measurements yielded dielectric permittivity and loss tangent of 1400 and 0.015, respectively, while high-field Sawyer-Tower measurements (P-E) showed linear behavior up to 40 kV/cm, which approached saturation at 200 kV/cm. Pulse charging transient and current-voltage measurements indicated a high charge storage density (15.8 μC/cm²) and low leakage current density (0.50 μA/cm²) under a field of 200 kV/cm. The charging time for a 1-μm² PLT capacitor at 200 kV/cm was estimated to be 0.1 ns. The preliminary data demonstrate that paraelectric PLT thin films have excellent potential for use in ULSI DRAMs and as decoupling capacitors

Keywords

DRAM chips; VLSI; elemental semiconductors; lanthanum compounds; lead compounds; loss-angle measurement; permittivity measurement; platinum; silicon; silicon compounds; sol-gel processing; titanium; DRAM; PbLaTiO₃-Pt-Ti-SiO₂-Si; ULSI; ULSI DRAMs; charge storage density; charging time; current-voltage measurements; decoupling capacitors; dielectric permittivity; high-field Sawyer-Tower measurements; leakage current density; linear behavior; loss tangent; low-field dielectric measurements; paraelectric PLT thin films; perovskite; saturation; sol-gel processing; Capacitors; Dielectric loss measurement; Dielectric losses; Dielectric measurements; Dielectric thin films; Loss measurement; Permittivity measurement; Pulse measurements; Semiconductor films; Transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.141225

Filename

141225