• DocumentCode
    755912
  • Title

    Influence of short circuits on data of contact and via open circuits determined by a novel weave test structure

  • Author

    Hess, Christopher ; Weiland, Larg H.

  • Author_Institution
    Inst. of Comput. Design & Fault Tolerance, Karlsruhe Univ., Germany
  • Volume
    9
  • Issue
    1
  • fYear
    1996
  • fDate
    2/1/1996 12:00:00 AM
  • Firstpage
    27
  • Lastpage
    34
  • Abstract
    Generally test structures containing via strings and contact strings are used to control backend isolation layers´ integrity. However, short circuits are the major type of fault resulting from defects during the backend process steps. For this reason, the influence that short circuits have on contact hole open circuits and via hole open circuits in regular string test structures will be investigated here. A novel weave test structure (WTS) is presented to detect open circuits as well as short circuits in adjacent conducting layers of backend process steps. Numerous contact strings or via strings are arranged inside boundary pads like a woven piece of cloth. Thus, short circuits between different strings are also electrically detectable. The separation and localization of defects will be achieved by dividing the chip area into distinguishable subchips inside given standard boundary pads without using any active semiconductor devices. The localization enables a versatile optical defect parameter extraction to precisely determine the reason why and how a defect occurred during the manufacturing process
  • Keywords
    fault diagnosis; fault location; integrated circuit interconnections; integrated circuit testing; short-circuit currents; backend isolation layers; boundary pads; conducting layers; contact strings; defect localization; electrical detection; faults; open circuits; optical defect parameter extraction; short circuits; subchips; via strings; weave test structure; Circuit faults; Circuit testing; Contacts; Electric variables measurement; Manufacturing processes; Optical sensors; Parameter extraction; Semiconductor device measurement; Semiconductor devices; Semiconductor diodes;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/66.484280
  • Filename
    484280