DocumentCode :
755912
Title :
Influence of short circuits on data of contact and via open circuits determined by a novel weave test structure
Author :
Hess, Christopher ; Weiland, Larg H.
Author_Institution :
Inst. of Comput. Design & Fault Tolerance, Karlsruhe Univ., Germany
Volume :
9
Issue :
1
fYear :
1996
fDate :
2/1/1996 12:00:00 AM
Firstpage :
27
Lastpage :
34
Abstract :
Generally test structures containing via strings and contact strings are used to control backend isolation layers´ integrity. However, short circuits are the major type of fault resulting from defects during the backend process steps. For this reason, the influence that short circuits have on contact hole open circuits and via hole open circuits in regular string test structures will be investigated here. A novel weave test structure (WTS) is presented to detect open circuits as well as short circuits in adjacent conducting layers of backend process steps. Numerous contact strings or via strings are arranged inside boundary pads like a woven piece of cloth. Thus, short circuits between different strings are also electrically detectable. The separation and localization of defects will be achieved by dividing the chip area into distinguishable subchips inside given standard boundary pads without using any active semiconductor devices. The localization enables a versatile optical defect parameter extraction to precisely determine the reason why and how a defect occurred during the manufacturing process
Keywords :
fault diagnosis; fault location; integrated circuit interconnections; integrated circuit testing; short-circuit currents; backend isolation layers; boundary pads; conducting layers; contact strings; defect localization; electrical detection; faults; open circuits; optical defect parameter extraction; short circuits; subchips; via strings; weave test structure; Circuit faults; Circuit testing; Contacts; Electric variables measurement; Manufacturing processes; Optical sensors; Parameter extraction; Semiconductor device measurement; Semiconductor devices; Semiconductor diodes;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/66.484280
Filename :
484280
Link To Document :
بازگشت