Title :
A standard-television compatible 648×487 pixel Schottky-barrier infrared CCD image sensor
Author :
Konuma, Kazuo ; Tohyama, Shigeru ; Tanabe, Akihito ; Teranishi, Nobukazu ; Masubuchi, Kouichi ; Saito, Tom ; Muramatsu, Toshio
Author_Institution :
NEC Corp.. Kanagawa, Japan
fDate :
7/1/1992 12:00:00 AM
Abstract :
Describes a 648×487 pixel PtSi Schottky-barrier infrared CCD image sensor. Due to the development of the modified inverted-LOCOS process, which can minimize dead regions, and the two-dopant concentration structure, which achieves both a large charge capability and high transfer efficiency, a 40% fill factor in a 21-μm×21-μm pixel and a 0.1-K noise equivalent temperature difference were obtained
Keywords :
CCD image sensors; Schottky effect; infrared imaging; television equipment; 315576 pixels; 487 pixels; 648 pixels; PtSi; Schottky-barrier infrared CCD image sensor; charge capability; fill factor; modified inverted-LOCOS process; noise equivalent temperature difference; transfer efficiency; two-dopant concentration structure; Boron; Charge coupled devices; Charge-coupled image sensors; Etching; Fabrication; Infrared image sensors; Infrared sensors; Photodiodes; Pixel; Resists;
Journal_Title :
Electron Devices, IEEE Transactions on
