Title :
InGaAs field-effect transistors with submicron gates for K-band applications
Author :
Johnson, Gregory A. ; Kapoor, Vik J. ; Schmitz, Dietmar ; Jurgensen, Holger
Author_Institution :
Dept. of Electr. & Comput. Eng., Cincinnati Univ., OH, USA
fDate :
3/1/1992 12:00:00 AM
Abstract :
Depletion mode InGaAs microwave power MISFETs with 0.7 μm gate lengths and 0.2 mm gate widths have been fabricated using an epitaxial process. The devices employed a plasma deposited silicon dioxide gate insulator. The RF power performance at 18 GHz, 20 GHz, and 23 GHz is presented. An output power density of 1.04 W/mm with a corresponding power gain and power-added efficiency of 3.7 dB and 40%, respectively, was obtained at 18 GHz. This is the highest output power density obtained for an InGaAs based transistor on InP at K-band. Record output power densities for an InGaAs MISFET were also demonstrated to the stable within 3% over 17 hours of continuous operation at 18 GHz
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; insulated gate field effect transistors; power transistors; solid-state microwave devices; 0.2 mm; 0.7 micron; 18 to 23 GHz; 3.7 dB; 40 percent; InGaAs; InP; K-band applications; RF power performance; SHF; depletion mode; epitaxial process; field-effect transistors; microwave power MISFETs; plasma deposited SiO2 gate insulator; power-added efficiency; submicron gates; FETs; Indium gallium arsenide; Insulation; MISFETs; Microwave devices; Plasma density; Plasma devices; Power generation; Radio frequency; Silicon compounds;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
