Static properties of the superconducting FET: Numerical analysis

Author

Okamoto, Masakuni

Author_Institution

Hitachi Ltd., Tokyo, Japan

Volume

39

Issue

7

fYear

1992

fDate

7/1/1992 12:00:00 AM

Firstpage

1661

Lastpage

1668

Abstract

A study of the feasibility of the superconducting FET using the high-T_c superconductors. Static properties are calculated using an equivalent circuit model. All superconductors are assumed to behave like BCS superconductors. The proximity effect is introduced from the phenomenological equation. Although the Schottky barrier effect at the superconductor-semiconductor interface is taken into account, this effect is found to be negligible. For the statics, a SFET made of all-copper-oxide materials seems to give a much longer transit time than that of a Nb-Si-Nb SFET due to low mobility of the normal conducting copper oxide assumed in this analysis. It is found, however, that a transit time of less than 1 ps can be attained if a material having a mobility as high as Si is used for the semiconductor layer

Keywords

equivalent circuits; field effect transistors; proximity effect; semiconductor device models; superconducting junction devices; BCS superconductors; Nb-Si-Nb; SFET; Schottky barrier effect; all-copper-oxide materials; equivalent circuit model; high-T_c superconductors.; mobility; phenomenological equation; proximity effect; static properties; superconducting FET; superconductor-semiconductor interface; transit time; Conducting materials; Copper; Equations; Equivalent circuits; FETs; Numerical analysis; Proximity effect; Schottky barriers; Superconducting materials; Superconductivity;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.141232

Filename

141232