Large signal modeling of HBT´s including self-heating and transit time effects

Author

Grossman, P. Chris ; Choma, John, Jr.

Author_Institution

TRW Electron. Syst. Group, Redondo Beach, CA, USA

Volume

40

Issue

3

fYear

1992

fDate

3/1/1992 12:00:00 AM

Firstpage

449

Lastpage

464

Abstract

A physically based, large signal heterojunction bipolar transistor (HBT) model is presented to account for the time dependence of the base, collector, and emitter charging currents, as well as self heating effects. The model tracks device performance over eight decades of current. The model can be used as the basis of SPICE modeling approximations, and to this end, examples are presented. A thesis for the divergence of high frequency large signal SPICE simulations from measured data is formulated, including a requisite empirical equation for the base-collector junction capacitance

Keywords

equivalent circuits; heterojunction bipolar transistors; semiconductor device models; solid-state microwave devices; HBT; HF large signal simulations; SPICE modeling approximations; SPICE simulations; base-collector junction capacitance; heterojunction bipolar transistor; large signal modelling; self heating effects; transit time effects; Bipolar transistors; Capacitance measurement; Circuit simulation; Equations; Frequency; Heating; Heterojunction bipolar transistors; Predictive models; SPICE; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.121720

Filename

121720