Title :
A model for analyzing the interface properties of a semiconductor-insulator-semiconductor structure. I. Capacitance and conductance techniques
Author :
Chen, Hung-Sheng ; Li, Sheng S.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
fDate :
7/1/1992 12:00:00 AM
Abstract :
A model is presented for analyzing the interface properties of a semiconductor-insulator-semiconductor (SIS) capacitor structure. By introducing a coupling factor, conventional metal-oxide-semiconductor (MOS) capacitor theory is extended to analyze the interface properties of the film/buried-oxide/substrate interfaces of a silicon-on-insulator (SOI) material. This model was used to determine parameters such as doping concentration, buried oxide thickness, fixed oxide charge, and interface trap density from the SIMOX (separation by implantation of oxygen) based SIS capacitors
Keywords :
doping profiles; electron traps; semiconductor-insulator boundaries; semiconductor-insulator-semiconductor structures; SIMOX; buried oxide thickness; capacitance techniques; conductance techniques; coupling factor; doping concentration; film/buried-oxide/substrate interfaces; fixed oxide charge; interface properties; interface trap density; semiconductor-insulator-semiconductor structure; Capacitance measurement; Conductive films; Density measurement; Doping; Equivalent circuits; MOS capacitors; Semiconductor films; Semiconductor process modeling; Silicon on insulator technology; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
