Title :
A model for analyzing the interface properties of a semiconductor-insulator-semiconductor structure. II. Transient capacitance technique
Author :
Chen, Hung-Sheng ; Li, Sheng S.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
fDate :
7/1/1992 12:00:00 AM
Abstract :
For pt.I see ibid., vol.39, no.7, p.1740-46 (1992). A bias-scan deep-level transient spectroscopy (DLTS) method for measuring interface states in a semiconductor-insulator-semiconductor (SIS) capacitor structure is described. Introducing a charge coupling factor between the film/oxide (F/O) and the substrate/oxide (S/O) interfaces made it possible to extract interface trap densities from the measured transient signals. This technique was used to determine the interface trap densities and capture cross sections at both the F/O and S/O interfaces of SIMOX (separation by implantation of oxygen) based SIS capacitors
Keywords :
capacitors; deep level transient spectroscopy; electron traps; interface electron states; semiconductor device models; semiconductor device testing; semiconductor-insulator boundaries; semiconductor-insulator-semiconductor structures; SIMOX; SIS capacitor structure; bias-scan DLTS; capture cross sections; charge coupling factor; deep-level transient spectroscopy; film/oxide interface; interface properties; interface states; interface trap densities; semiconductor-insulator-semiconductor structure; substrate/oxide interface; transient capacitance technique; transient signals; Capacitance; Capacitors; Conductive films; Energy capture; Filling; Interface states; Semiconductor films; Silicon; Substrates; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
