DocumentCode :
756133
Title :
Effect of inhomogeneous line broadening on gain and differential gain of quantum dot lasers
Author :
Qasaimeh, Omar
Author_Institution :
Dept. of Electr. Eng., Jordan Univ. of Sci. & Technol., Irbid, Jordan
Volume :
50
Issue :
7
fYear :
2003
fDate :
7/1/2003 12:00:00 AM
Firstpage :
1575
Lastpage :
1581
Abstract :
Detailed theoretical analysis of the size fluctuation in InAs-GaAs quantum dot (QD) lasers is presented. Analytical expressions for the inhomogeneous line broadening and the optical gain are derived for a Gaussian size fluctuation distribution. The effect of size fluctuations on the QD carrier density, modal gain, and differential gain is studied. Red shifts in the gain peak is observed when size fluctuations increases. The energy detuning between the gain peak and the differential gain peak for a pyramidal quantum dot system having an average base length of 130 Å and standard deviation of 7 Å is about 12 meV.
Keywords :
Gaussian distribution; III-V semiconductors; carrier density; gallium arsenide; indium compounds; laser theory; quantum dot lasers; spectral line broadening; Gaussian distribution; InAs-GaAs; InAs-GaAs quantum dot laser; carrier density; differential gain; energy detuning; inhomogeneous line broadening; modal gain; optical gain; red shift; size fluctuation; Chemical lasers; Fluctuations; Laser modes; Laser theory; Laser tuning; Optical saturation; Quantum dot lasers; Quantum mechanics; Semiconductor lasers; US Department of Transportation;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2003.813907
Filename :
1217239
Link To Document :
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