0.2-μm gate-length InGaP-InGaAs DCFETs for C-band MMIC amplifier applications

Author

Chiu, Hsien-Chin ; Yang, Shih-Cheng ; Lin, Cheng-Kuo ; Hwu, Ming-Jyh ; Chan, Yi-Jen

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chung-li, Taiwan

Volume

50

Issue

7

fYear

2003

fDate

7/1/2003 12:00:00 AM

Firstpage

1599

Lastpage

1603

Abstract

A C-band In_0.49Ga_0.51P-In_0.15Ga_0.85As doped-channel FET (DCFET) monolithic power amplifier was designed and fabricated using low-k benzocyclobutene (BCB) interlayer technology. With a photosensitive low-k BCB interlayer (ε=2.7), not only can the circuit´s passivation layer, but also the capacitor insulator, via holes, and bridge process be realized simultaneously, where the process complexity and cost can be reduced. In addition, a 0.2-μm T-shaped gate InGaP-InGaAs doped-channel FET with a high current density and a high linearity is introduced to the amplifier using the e-beam lithography. This C-band power amplifier can achieve a linear power gain of 9.3 dB and an output power of 15.3 dBm, which proves that this novel MMIC process using low-k BCB interlayer technology is attractive for microwave and millimeter wave circuit applications.

Keywords

III-V semiconductors; MMIC power amplifiers; field effect transistors; gallium arsenide; gallium compounds; indium compounds; 0.2 micron; 9.3 dB; C-band MMIC amplifier; In_0.49Ga_0.51P-In_0.15Ga_0.85As; InGaP-InGaAs doped-channel FET; T-shaped gate; bridge process; capacitor insulator; current density; electron beam lithography; linearity; low-k BCB interlayer; monolithic power amplifier; passivation layer; via hole; Bridge circuits; Capacitors; Costs; Current density; FETs; Insulation; Linearity; MMICs; Millimeter wave technology; Passivation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2003.814987

Filename

1217242