Title :
Modeling submicrometer GaAs MESFETs using PISCES with an apparent gate-length-dependent velocity-field relation
Author :
Fardi, Hamid Z. ; Hayes, Russell E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Colorado Univ., Boulder, CO, USA
fDate :
7/1/1992 12:00:00 AM
Abstract :
An empirical velocity-field relationship, based on Monte Carlo simulation, is integrated into the PISCES drift-diffusion simulation program in order to analyze short-gate GaAs MESFETs. The current-voltage characteristics are compared with 2D Monte Carlo simulation results on a 0.2 μm gate length and with measured I-V characteristics of a 0.32 μm gate-length GaAs MESFET. The comparison and the analysis made support the accuracy of the modified drift-diffusion model and show that it is computationally efficient for simulation of short-gate devices
Keywords :
III-V semiconductors; Monte Carlo methods; Schottky gate field effect transistors; digital simulation; electronic engineering computing; gallium arsenide; semiconductor device models; 0.2 micron; 0.32 micron; 2D simulation; GaAs; I-V characteristics; Monte Carlo simulation; PISCES; current-voltage characteristics; drift-diffusion simulation program; gate-length-dependent; modified drift-diffusion model; short-gate devices; submicron MESFET; velocity-field relation; Analytical models; Circuit simulation; Computational modeling; Current-voltage characteristics; Design automation; Electrons; Gallium arsenide; MESFETs; Monte Carlo methods; Poisson equations;
Journal_Title :
Electron Devices, IEEE Transactions on
