Modeling submicrometer GaAs MESFETs using PISCES with an apparent gate-length-dependent velocity-field relation

Author

Fardi, Hamid Z. ; Hayes, Russell E.

Author_Institution

Dept. of Electr. & Comput. Eng., Colorado Univ., Boulder, CO, USA

Volume

39

Issue

7

fYear

1992

fDate

7/1/1992 12:00:00 AM

Firstpage

1778

Lastpage

1780

Abstract

An empirical velocity-field relationship, based on Monte Carlo simulation, is integrated into the PISCES drift-diffusion simulation program in order to analyze short-gate GaAs MESFETs. The current-voltage characteristics are compared with 2D Monte Carlo simulation results on a 0.2 μm gate length and with measured I-V characteristics of a 0.32 μm gate-length GaAs MESFET. The comparison and the analysis made support the accuracy of the modified drift-diffusion model and show that it is computationally efficient for simulation of short-gate devices

Keywords

III-V semiconductors; Monte Carlo methods; Schottky gate field effect transistors; digital simulation; electronic engineering computing; gallium arsenide; semiconductor device models; 0.2 micron; 0.32 micron; 2D simulation; GaAs; I-V characteristics; Monte Carlo simulation; PISCES; current-voltage characteristics; drift-diffusion simulation program; gate-length-dependent; modified drift-diffusion model; short-gate devices; submicron MESFET; velocity-field relation; Analytical models; Circuit simulation; Computational modeling; Current-voltage characteristics; Design automation; Electrons; Gallium arsenide; MESFETs; Monte Carlo methods; Poisson equations;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.141251

Filename

141251