Author :
Dietrich, Stefan ; Angerbauer, Michael ; Ivanov, Milena ; Gogl, Dietmar ; Hoenigschmid, Heinz ; Kund, Michael ; Liaw, Corvin ; Markert, Michael ; Symanczyk, Ralf ; Altimime, Laith ; Bournat, Serge ; Mueller, Gerhard
Abstract :
A 2-Mbit CBRAM (Conductive Bridging Random Access Memory) core has been developed utilizing a 90 nm, VDD=1.5 V process technology. The presented design uses an 8F2 (0.0648 mum2) 1T1CBJ (1-Transistor/1-Conductive Bridging Junction) cell and introduces a fast feedback regulated CBJ read voltage and a novel program charge control using dummy cell bleeder devices. Random read/write cycle times les50ns are demonstrated
Keywords :
integrated memory circuits; nanoelectronics; random-access storage; 1.5 V; 2 Mbit; 8F2 1T1CBJ cell; 90 nm; CBRAM memory core; advanced read control; cell bleeder devices; conductive bridging random access memory; nonvolatile memory; program charge control; program control; regulated CBJ read voltage; universal memory; Anodes; Bridge circuits; Electrical resistance measurement; Feedback; Joining processes; Metallization; Nonvolatile memory; Random access memory; Read-write memory; Voltage control; 1T1CBJ; CBRAM; program; universal memory;
