Space-charge effects in ballistic injection across heterojunctions [FETs]

Author

Weinzierl, S.R. ; Krusius, J.P.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

Volume

39

Issue

7

fYear

1992

fDate

7/1/1992 12:00:00 AM

Firstpage

1780

Lastpage

1782

Abstract

Conditions under which ballistic injection across heterojunctions is suppressed in unipolar FET devices have been examined using two-dimensional Monte Carlo simulation. Gate-induced lateral space charges influence via macroscopic current continuity the dipole layer at the heterojunction. A retarding dipole layer is shown to result in ballistic electron fractions and transit times comparable to those found in homojunction devices. Guidelines for avoiding the formation of a regarding dipole layer are given

Keywords

Monte Carlo methods; field effect transistors; high field effects; hot carriers; p-n heterojunctions; semiconductor device models; simulation; space charge; ballistic electron fractions; ballistic injection; dipole layer; gate-induced lateral space charges; heterojunctions; macroscopic current continuity; retarding dipole layer; space charge effects; transit times; two-dimensional Monte Carlo simulation; unipolar FET devices; Anodes; Doping; Electrons; FETs; Guidelines; Heterojunctions; Monitoring; Poisson equations; Space charge; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.141252

Filename

141252