Title :
500-MS/s 5-bit ADC in 65-nm CMOS With Split Capacitor Array DAC
Author :
Ginsburg, Brian P. ; Chandrakasan, Anantha P.
Author_Institution :
Massachusetts Inst. of Technol., Cambridge, MA
fDate :
4/1/2007 12:00:00 AM
Abstract :
A 500-MS/s 5-bit ADC for UWB applications has been fabricated in a 65-nm CMOS technology using no analog-specific processing options. The time-interleaved successive approximation register (SAR) architecture has been chosen due to its simplicity versus flash and its amenability to scaled technologies versus pipelined, which relies on operational amplifiers. Six time-interleaved channels are used, sharing a single clock operating at the composite sampling rate. Each channel has a split capacitor array that reduces switching energy, increases speed, and has similar INL and decreased DNL, as compared to a conventional binary-weighted array. A variable delay line adjusts the instant of latch strobing to reduce preamplifier currents. The ADC achieves Nyquist performance, with an SNDR of 27.8 and 26.1 dB for 3.3and 239 MHz inputs, respectively. The total active area is 0.9mm2, and the ADC consumes 6 mW from a 1.2-V supply
Keywords :
CMOS digital integrated circuits; analogue-digital conversion; capacitors; delay lines; nanotechnology; ultra wideband technology; 1.2 V; 239 MHz; 3.3 MHz; 5 bit; 6 mW; 65 nm; CMOS ADC; Nyquist performance; analog-to-digital conversion; deep-submicron CMOS technology; latch strobing; reduced preamplifier currents; scaled technologies; split capacitor array; time-interleaved channels; time-interleaved successive approximation register; ultra-wideband radio; variable delay line; Analog-digital conversion; CMOS process; CMOS technology; Clocks; Energy consumption; Feedback; Operational amplifiers; Sampling methods; Switched capacitor circuits; Throughput; ADC; analog-to-digital conversion; deep-submicron CMOS; successive approximation register; ultra-wideband radio;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2007.892169