Title :
Measurements of InGaP electron ionization coefficient using InGaP-GaAs-InGaP double HBTs
Author :
Neo, Wah-Peng ; Wang, Hong ; Radhakrishnan, K.
Author_Institution :
Microelectron. Centre, Nanyang Technol. Univ., Singapore, Singapore
fDate :
7/1/2003 12:00:00 AM
Abstract :
Electron impact ionization coefficients (α) in In0.52Ga0.48P have been extracted based on the measurements of electron multiplication factor in npn InGaP-GaAs-InGaP double heterojunction bipolar transistors (HBTs). The electron ionization coefficient of InGaP determined in this brief extends the previously reported data in low electric field by two orders of magnitude down to 1 cm-1 with the electric field as low as 330 kV/cm.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; impact ionisation; indium compounds; In0.52Ga0.48P; InGaP-GaAs-InGaP; electron impact ionization coefficient; electron multiplication factor; npn InGaP-GaAs-InGaP double heterojunction bipolar transistor; Avalanche breakdown; Charge carrier processes; Electric variables measurement; Electrons; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Impact ionization; MODFETs; Photoconductivity;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.814986
