• DocumentCode
    756384
  • Title

    Measurements of InGaP electron ionization coefficient using InGaP-GaAs-InGaP double HBTs

  • Author

    Neo, Wah-Peng ; Wang, Hong ; Radhakrishnan, K.

  • Author_Institution
    Microelectron. Centre, Nanyang Technol. Univ., Singapore, Singapore
  • Volume
    50
  • Issue
    7
  • fYear
    2003
  • fDate
    7/1/2003 12:00:00 AM
  • Firstpage
    1711
  • Lastpage
    1714
  • Abstract
    Electron impact ionization coefficients (α) in In0.52Ga0.48P have been extracted based on the measurements of electron multiplication factor in npn InGaP-GaAs-InGaP double heterojunction bipolar transistors (HBTs). The electron ionization coefficient of InGaP determined in this brief extends the previously reported data in low electric field by two orders of magnitude down to 1 cm-1 with the electric field as low as 330 kV/cm.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; impact ionisation; indium compounds; In0.52Ga0.48P; InGaP-GaAs-InGaP; electron impact ionization coefficient; electron multiplication factor; npn InGaP-GaAs-InGaP double heterojunction bipolar transistor; Avalanche breakdown; Charge carrier processes; Electric variables measurement; Electrons; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Impact ionization; MODFETs; Photoconductivity;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2003.814986
  • Filename
    1217261
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=756384