Compact Layout and Bias-Dependent Base-Resistance Modeling for Advanced SiGe HBTs

Author

Schroter, Michael ; Krause, Julia ; Lehmann, Steffen ; Celi, Didier

Author_Institution

Dresden Univ. of Technol., Dresden

Volume

55

Issue

7

fYear

2008

fDate

7/1/2008 12:00:00 AM

Firstpage

1693

Lastpage

1701

Abstract

In this paper, an improved and extended set of physics-based analytical equations for describing the external and internal base resistance of silicon-germanium HBTs as a function of geometry (layout) is presented. The investigated layouts include single- and double-base contacts not only in parallel but also perpendicular to the emitter finger. In addition, via and slot base contacts, a large range of link to internal-base-sheet-resistance ratio, and changes in external base layout dimensions are covered. The new equations are verified using quasi-3-D device simulation and are demonstrated to be applicable to all practically useful emitter aspect ratios.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; SiGe; advanced HBT; bias-dependent base-resistance modeling; external base layout dimensions; external base resistance; internal-base-sheet-resistance ratio; physics-based analytical equations; quasi-3-D device; Bipolar transistors; CMOS process; Circuit simulation; Contact resistance; Equations; Fingers; Geometry; Germanium silicon alloys; Silicon germanium; Solid modeling; Base resistance; HICUM; bipolar transistors; high-frequency circuit design; transistor modeling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.924440

Filename

4545050