Time Response of Two-Dimensional Gas-Based Vertical Field Metal–Semiconductor–Metal Photodetectors

Author

Zhao, Xia ; Currie, Marc ; Cola, Adriano ; Quaranta, Fabio ; Gallo, Eric ; Spanier, Jonathan E. ; Nabet, Bahram

Author_Institution

Dept. of Electr. & Comput. Eng., Drexel Univ., Philadelphia, PA

Volume

55

Issue

7

fYear

2008

fDate

7/1/2008 12:00:00 AM

Firstpage

1762

Lastpage

1770

Abstract

We have fabricated and characterized 2-D gas-based, including 2-D electron gas (2DEG) and 2-D hole gas (2DHG), heterostructure metal-semiconductor-metal (MSM) photodetectors on GaAs. Both the high-speed measurement of time response and the simulation results show that a vertical field developed in the active absorption region due to the delta-doping layer facilitates one type of photogenerated carrier transport. In addition, the confined carriers facilitate collection of the optically generated carriers that reach them. The vertical field in the MSM structure that is created by a 2-D gas transforms a traditional lateral MSM device to a vertical one, although remaining as a planar structure, thus allowing a device design for high-speed performance without sacrificing the external quantum efficiency.

Keywords

III-V semiconductors; electron gas; metal-semiconductor-metal structures; photodetectors; 2D electron gas; 2D hole gas; GaAs; external quantum efficiency; heterostructure metal-semiconductor-metal photodetectors; photogenerated carrier transport; planar structure; time response; Absorption; Charge carrier processes; Fingers; HEMTs; High speed optical techniques; Optical coupling; Optical waveguides; Photodetectors; Time factors; Two dimensional hole gas; 2-D electron gas (2DEG); 2-D hole gas (2DHG); Metal–semiconductor–metal (MSM); photodetector (PD); time response;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.925242

Filename

4545057