Amorphous silicon TFT-based active-matrix organic polymer LEDs

Author

Kim, Joo-Han ; Hong, Yongtaek ; Kanicki, Jerzy

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA

Volume

24

Issue

7

fYear

2003

fDate

7/1/2003 12:00:00 AM

Firstpage

451

Lastpage

453

Abstract

We report active-matrix organic polymer light-emitting displays (LEDs) based on a three hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) pixel electrode circuit that supplies a continuous output current to organic polymer light-emitting devices. The output current level drift induced by either process variations or device aging can be reduced in this design by adjusting the driver TFT operating point with the active resistor. Our first green light-emitting engineering prototype had a brightness of 120 cd/m/sup 2/ and fill factor of about 45%.

Keywords

LED displays; ageing; amorphous semiconductors; elemental semiconductors; flat panel displays; hydrogen; optical polymers; silicon; thin film transistors; Si:H; active resistor; active-matrix organic polymer light-emitting display; brightness; current drift; device aging; fill factor; flat panel display; green light emission; hydrogenated amorphous silicon thin-film transistor pixel electrode circuit; Active matrix technology; Aging; Amorphous silicon; Displays; Driver circuits; Electrodes; Light emitting diodes; Organic light emitting diodes; Resistors; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.814999

Filename

1217294