Title :
N-channel MOSFETs fabricated on homoepitaxy-grown 3C-SiC films
Author :
Kiong Lee, Kin ; Ishida, Yuuki ; Ohshima, Takeshi ; Kojima, Kazutoshi ; Tanaka, Yasunori ; Takahashi, Tetsuo ; Okumura, Hajime ; Arai, Kazuo ; Kamiya, Tomihiro
Author_Institution :
Japan Atomic Energy Res. Inst., Gunma, Japan
fDate :
7/1/2003 12:00:00 AM
Abstract :
We present results of the enhancement mode, n-channel 3C-silicon carbide (SiC) MOSFETs fabricated on homoepitaxy 3C-SiC films. The fabricated devices exhibit excellent gate-controlled linear and saturation regimes of operation. The average effective channel mobility is found to be 229 cm/sup 2//Vs. The breakdown field of the gate oxide is observed at be 11 MV/cm and the subthreshold swing is determined to be 280 mV/decade.
Keywords :
MOSFET; carrier mobility; electron traps; semiconductor epitaxial layers; silicon compounds; wide band gap semiconductors; N-channel MOSFETs; SiC; breakdown field; effective channel mobility; enhancement mode; gate-controlled linear regimes; homoepitaxy-grown 3C-SiC films; interface traps; saturation regimes; subthreshold swing; Annealing; Electric breakdown; Inductors; Ion implantation; MOSFETs; Oxidation; Semiconductor films; Silicon carbide; Substrates; Temperature;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.815006
