Title :
Ka-band high efficiency power amplifier MMIC with 0.30 μm MESFET for high volume applications
Author :
Mondal, Jayant ; Geddes, J. ; Carlson, Darren ; Vickberg, M. ; Bounnak, S. ; Anderson, C.
Author_Institution :
SRC Honeywell, Bloomington, MN
fDate :
3/1/1992 12:00:00 AM
Abstract :
A single-ended three-stage MESFET power amplifier designed for high-volume, low-cost applications shows an average of 15-21% power added efficiency in Ka-band with 100-150 mW of power output over 30-35 GHz. Δ<S21 with power saturation, an important parameter in phased array applications, is also reported. Efficiencies as high as 28% were measured on good wafers with high on-wafer repeatability under power drive
Keywords :
MMIC; Schottky gate field effect transistors; field effect integrated circuits; microwave amplifiers; power amplifiers; 0.3 micron; 100 to 150 mW; 15 to 28 percent; 30 to 35 GHz; Ka-band; MESFET; MMIC; high volume applications; low-cost applications; monolithic microwave IC; phased array applications; power added efficiency; power amplifier; single-ended three-stage; Doping; Etching; Fingers; High power amplifiers; MESFETs; MMICs; Optical amplifiers; Optical transmitters; Phased arrays; Transconductance;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
