Parameter extraction technique for HBT equivalent circuit using cutoff mode measurement

Author

Lee, Seonghearn ; Gopinath, Anand

Author_Institution

Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA

Volume

40

Issue

3

fYear

1992

fDate

3/1/1992 12:00:00 AM

Firstpage

574

Lastpage

577

Abstract

A parameter extraction method based on the S-parameter measurements of the heterojunction bipolar transistors (HBTs) biased to cutoff is proposed. This method is applied to confirm the results for the RF probe pad and interconnection pattern parasitics obtained from the special test structures, and to determine some of the device capacitances of the HBT. The remaining device parameters are extracted by the S-parameter measurements of the devices biased to the active mode. The extraction technique gives good agreement between the equivalent circuit and the measured S-parameters of the HBT including probe pads and interconnections

Keywords

S-parameters; capacitance; equivalent circuits; heterojunction bipolar transistors; semiconductor device models; solid-state microwave devices; HBT equivalent circuit; RF probe pad; S-parameter measurements; cutoff mode measurement; device capacitances; heterojunction bipolar transistors; interconnection pattern parasitics; parameter extraction; Circuit testing; Equivalent circuits; Frequency measurement; Heterojunction bipolar transistors; Integrated circuit measurements; Parameter extraction; Parasitic capacitance; Probes; Radio frequency; Scattering parameters;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.121736

Filename

121736