Title :
A 140-GHz monolithic low noise amplifier
Author :
Wang, H. ; Lai, Richard ; Lo, D.C.W. ; Streit, D.C. ; Liu, P.H. ; Dia, R.M. ; Pospieszalski, M.W. ; Berenz, J.
Author_Institution :
Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
fDate :
5/1/1995 12:00:00 AM
Abstract :
This paper presents the development of a 140-GHz monolithic low noise amplifier (LNA) using 0.1-μm pseudomorphic InAlAs-InGaAs-InP low noise HEMT technology. A two-stage single-ended 140-GHz monolithic LNA has been designed, fabricated and tested. It exhibits a measured small signal gain of 9 dB at 142 GHz, and more than 5-dB gain from 138-145 GHz. This is the highest frequency monolithic amplifier ever reported using three terminal devices.
Keywords :
HEMT integrated circuits; MMIC amplifiers; field effect MIMIC; integrated circuit noise; millimetre wave amplifiers; 0.1 micron; 138 to 145 GHz; 5 dB; 9 dB; EHF; InAlAs-InGaAs-InP; MIMIC; MM-wave IC; low noise HEMT technology; low noise amplifier; monolithic LNA; pseudomorphic HEMT; two-stage single-ended type; Frequency; Gain measurement; HEMTs; Indium phosphide; Integrated circuit noise; Low-noise amplifiers; MMICs; Radiofrequency amplifiers; Radiometry; Testing;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
