• DocumentCode
    757115
  • Title

    Modeling Laterally-Contacted nipi-Diode Radioisotope Batteries

  • Author

    Cress, Cory D. ; Landi, Brian J. ; Raffaelle, Ryne P.

  • Author_Institution
    Rochester Inst. of Technol., Rochester, NY
  • Volume
    55
  • Issue
    3
  • fYear
    2008
  • fDate
    6/1/2008 12:00:00 AM
  • Firstpage
    1736
  • Lastpage
    1743
  • Abstract
    A framework for modeling the power generation of laterally-contacted n-type/intrinsic/p-type/intrinsic (nipi) diodes coupled with an alpha-particle radioisotope source is developed. The framework consists of two main parts, the alpha-particle energy deposition profile (ADEP) and a lumped parameter equivalent circuit model describing the nipi device operation. Experimental measurements are used to verify the ADEP modeling approach which determines the spatially varying energy deposited within the device. Using these results, nipi-diode radioisotope batteries are simulated and the effect of the number of junctions, the thickness of the junction, and the alpha-particle flux on output voltage and power are investigated. The modeling results indicate that a 1 cm2 bi-layer device (consisting of one source and two adjacent nipi-diodes) with a source activity of 300 mCi can reach a power output of 2 mW, excluding radiation damage effects.
  • Keywords
    alpha-particle sources; cells (electric); equivalent circuits; radioactive sources; radioisotopes; semiconductor device models; semiconductor diodes; alpha-particle energy deposition profile; alpha-particle radioisotope source; equivalent circuit model; nipi-diode radioisotope batteries; power generation; Batteries; Dark current; Indium phosphide; Isotopes; Lattices; Photovoltaic systems; Radioactive materials; Silicon carbide; Solar power generation; Voltage; Displacement damage dose profile; InGaP photovoltaic; NIEL; SRIM; micropower devices; radioisotope batteries;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2008.920263
  • Filename
    4545099