DocumentCode :
75719
Title :
An Adaptive Integration Time CMOS Image Sensor With Multiple Readout Channels
Author :
Xinyuan Qian ; Hang Yu ; Shoushun Chen ; Kay Soon Low
Author_Institution :
VIRTUS IC Design Centre of Excellence, Nanyang Technol. Univ., Singapore, Singapore
Volume :
13
Issue :
12
fYear :
2013
fDate :
Dec. 2013
Firstpage :
4931
Lastpage :
4939
Abstract :
In this paper, we present an adaptive integration time CMOS image sensor with multiple readout channels for star tracker application. The sensor architecture allows each pixel to have an adaptive integration time. Through cyclically selecting a row of pixels and checking the integration voltage of each pixel, brighter pixels can be marked and readout first. Those dimmer pixels will continue integration until their voltage fall into a window defined by two threshold voltages. Each pixel only consists of five transistors. To improve the readout throughput and hence to reduce the rolling time, a multiple readout channel architecture is proposed. A proof-of-concept 320 × 128-pixel image sensor was implemented using Global Foundries 0.18 μm mixed-signal CMOS process.
Keywords :
CMOS image sensors; star trackers; CMOS image sensor; Global Foundries mixed-signal CMOS process; adaptive integration time; multiple readout channels; size 0.18 mum; star tracker application; Arrays; CMOS image sensors; Capacitors; Dynamic range; Photoconductivity; Simulation; Threshold voltage; CMOS image sensor; adaptive integration time; high dynamic range (HDR); multiple readout channels; star tracker; wide dynamic range (WDR);
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2013.2277516
Filename :
6576179
Link To Document :
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