Title :
High Speed 1.55 μm InAs/InGaAlAs/InP Quantum Dot Lasers
Author :
Gready, D. ; Eisenstein, Gadi ; Ivanov, V. ; Gilfert, Christian ; Schnabel, F. ; Rippien, A. ; Reithmaier, J.P. ; Bornholdt, Carsten
Author_Institution :
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
Abstract :
We report static and dynamic characteristics of InAs/InP quantum dot (QD) lasers emitting near 1.55 μm. The gain section was optimized for a high speed operation using a unique spatially resolved model. The measured modulation capability dependence on structural parameters (barrier width and the number of QD layers) is consistent with the model predictions. Short cavity lasers with a modal gain of more than 10 cm-1 per dot layer exhibit a small signal modulation bandwidth above 9 GHz and large signal modulation at up to 22 Gb/s with an on/off ratio of 3 dB.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser cavity resonators; optical modulation; quantum dot lasers; InAs-InGaAlAs-InP; gain section; modal gain; modulation capability; optical modulation; quantum dot lasers; short cavity lasers; wavelength 1.55 mum; Gain; Laser modes; Laser theory; Measurement by laser beam; Modulation; Quantum dot lasers; Quantum dots; optoelectronic devices; semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2013.2287502
