• DocumentCode
    757292
  • Title

    Demonstration of ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes

  • Author

    Guo, Xiangyi ; Rowland, Larry B. ; Dunne, Greg T. ; Fronheiser, Jody A. ; Sandvik, Peter M. ; Beck, Ariane L. ; Campbell, Joe C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
  • Volume
    18
  • Issue
    1
  • fYear
    2006
  • Firstpage
    136
  • Lastpage
    138
  • Abstract
    We report ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes. An external quantum efficiency of 83% (187 mA/W) at 278 nm, corresponding to unity gain after reach-through was achieved. A gain higher than 1000 was demonstrated without edge breakdown.
  • Keywords
    avalanche photodiodes; hydrogen; silicon compounds; ultraviolet spectra; wide band gap semiconductors; 278 nm; 4H-SiC avalanche photodiodes; SiC:H; external quantum efficiency; ultraviolet separate absorption; ultraviolet separate multiplication; unity gain; Avalanche photodiodes; Doping; Electric breakdown; Electromagnetic wave absorption; Epitaxial layers; Impact ionization; Infrared spectra; Mass spectroscopy; Silicon carbide; Substrates; Avalanche photodiodes (APDs); silicon carbide (SiC); ultraviolet (UV);
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2005.860384
  • Filename
    1556653
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=757292