Author :
Luy, Johann-Friedrich ; Strohm, Karl M. ; Sasse, Hans-Eckard ; Schüppen, Andreas ; Buechler, Josef ; Wollitzer, Michael ; Gruhle, Andreas ; Schäffler, Friedrich ; Guettich, Ulrich ; Klaassen, Andreas
Author_Institution :
Res. Center, Daimler-Benz AG, Ulm, Germany
fDate :
4/1/1995 12:00:00 AM
Abstract :
Silicon-based millimeter-wave integrated circuits (SIMMWIC´s) can provide new solutions for near range sensor and communication applications in the frequency range above 50 GHz. This paper presents a survey on the state-of-the-art performance of this technology and on first applications, The key devices are IMPATT diodes for MM-wave power generation and detection in the self-oscillating mixer mode, p-i-n diodes for use in switches and phase shifters, and Schottky diodes in detector and mixer circuits. The silicon/silicon germanium heterobipolar transistor (SiGe HBT) with fmax values of more than 90 GHz is now used for low-noise oscillators at Ka-band frequencies. First system applications are discussed
Keywords :
Ge-Si alloys; IMPATT diodes; MIMIC; Schottky diode mixers; elemental semiconductors; heterojunction bipolar transistors; integrated circuit technology; millimetre wave detectors; millimetre wave mixers; millimetre wave oscillators; millimetre wave phase shifters; p-i-n diodes; semiconductor materials; silicon; 90 GHz; EHF; HBT circuits; IMPATT diodes; Ka-band frequencies; MIMIC; MM-wave ICs; MM-wave detection; MM-wave power generation; Schottky diodes; Si-SiGe; heterobipolar transistor; low-noise oscillators; millimeter-wave integrated circuits; p-i-n diodes; phase shifters; self-oscillating mixer mode; switches; Frequency; Germanium silicon alloys; Integrated circuit technology; Millimeter wave integrated circuits; P-i-n diodes; Phase detection; Power generation; Schottky diodes; Silicon germanium; Switching circuits;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
