Title :
Radiation resistance of single-frequency 1310-nm AlGaInAs-InP grating-outcoupled surface-emitting lasers
Author :
Ye, Jingbo ; Liu, Tiankuan ; Stroynowski, Ryszard ; Wakeland, Benjamin E. ; Xiang, Annie C. ; Amarasinghe, Nuditha ; McWilliams, Scott ; Masood, Taha ; Evans, Gary
Author_Institution :
Dept. of Phys., Southern Methodist Univ., Dallas, TX, USA
Abstract :
The results of two irradiation tests on 14 single-frequency 1310-nm grating-outcoupled surface-emitting semiconductor lasers that have been exposed to ionizing radiation using 200-MeV/c proton beams are reported. Twelve powered lasers survived a total radiation dose of up to 22.3 Mrad. One of the two not-powered lasers survived a total dose of 1.5 Mrad. The other failed after an integrated dose of 22.3 Mrad, suggesting that annealing may play an important role in laser performance during irradiation. The static and dynamic characteristics of the lasers after irradiation indicate the suitability of these lasers for medical, space, and accelerator-based nuclear and particle physics applications.
Keywords :
III-V semiconductors; aluminium compounds; annealing; diffraction gratings; dosimetry; gallium arsenide; indium compounds; laser cavity resonators; proton effects; semiconductor device testing; semiconductor lasers; surface emitting lasers; 1.5 Mrad; 1310 nm; 22.3 Mrad; AlGaInAs-InP; AlGaInAs-InP lasers; accelerator-based nuclear applications; annealing; dynamic laser characteristics; grating-outcoupled lasers; integrated radiation dose; ionizing radiation exposure; irradiation tests; medical applications; particle physics applications; proton beams; radiation resistance; semiconductor lasers; single-frequency lasers; space applications; static laser characteristics; surface-emitting lasers; total radiation dose; Gratings; Immune system; Ionizing radiation; Laser theory; Particle beams; Power lasers; Semiconductor device testing; Semiconductor lasers; Surface emitting lasers; Surface resistance; Gratings; high-energy physics; radiation hard; semiconductor lasers; space applications; surface-emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.860055
