Title :
Circular under-pad multiple-mode ESD protection structure for ICs
Author :
Feng, H.G. ; Zhan, R.Y. ; Wu, Q. ; Chen, G. ; Wang, A.Z.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
fDate :
5/23/2002 12:00:00 AM
Abstract :
A novel circular pad-oriented low-parasitic all-mode electrostatic discharge (ESD) protection structure is designed in BiCMOS for RF and mixed-signal (MS) ICs, featuring tunable triggering, low voltage clamping (~2 V), low discharge impedance (~Ω) and low leakage current (~pA). It consumes limited silicon and achieves 14 kV ESD protection
Keywords :
BiCMOS integrated circuits; electrostatic discharge; integrated circuit design; mixed analogue-digital integrated circuits; protection; 14 kV; BiCMOS; ESD protection; IC bonding pads; RF ICs; circular under-pad multiple-mode structure; electrostatic discharge protection; low discharge impedance; low leakage current; low voltage clamping; mixed-signal integrated circuits; pad-oriented low-parasitic all-mode structure; tunable triggering;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020356
