Fabrication of 1.55 μm VCSELs on Si using metallic bonding

Author

Lin, H.C. ; Wang, W.H. ; Hsieh, K.C. ; Cheng, K.Y.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

38

Issue

11

fYear

2002

fDate

5/23/2002 12:00:00 AM

Firstpage

516

Lastpage

517

Abstract

Using AuGeNiCr multilayered metals as the wafer bonding medium, long-wavelength GaInAsP/InP vertical cavity surface emitting lasers employing Al-oxide/Si as the upper and lower distributed Bragg reflectors were fabricated on Si substrate with the bonding interface formed outside the vertical cavity surface emitting laser cavity. Laser emission at 1.545 μm was measured under pulsed operations near room temperature. The low-temperature metallic bonding process demonstrates a great potential in device fabrication

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; surface emitting lasers; 1.545 micron; 1.55 micron; AuGeNiCr; AuGeNiCr multilayered metals; DBR; GaInAsP-InP; Si; Si substrate; VCSEL; device fabrication; distributed Bragg reflectors; laser emission; long-wavelength lasers; low-temperature metallic bonding process; metallic bonding; pulsed operations; room temperature; vertical cavity surface emitting lasers; wafer bonding medium;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20020342

Filename

1006792