• DocumentCode
    757555
  • Title

    Dynamic exclusive-OR gate based on gate-induced Si island single-electron transistor

  • Author

    Kim, Dae Hwan ; Kim, Kyung Rok ; Sung, Suk-Kang ; Lee, Jong Duk ; Park, Byung-Gook

  • Author_Institution
    Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
  • Volume
    38
  • Issue
    11
  • fYear
    2002
  • fDate
    5/23/2002 12:00:00 AM
  • Firstpage
    527
  • Lastpage
    529
  • Abstract
    Basic operation of a dynamic exclusive-OR gate implemented by a field effect transistor and a single-electron transistor is experimentally demonstrated, for the first time. Logic output voltage shows full swing operation at a supply voltage of 20 mV. Fabricated single-electron transistors are advantageous for implementing a multi-gate single-electron logic circuit
  • Keywords
    MOSFET; logic gates; single electron transistors; 20 mV; MOSFET; SET; dynamic XOR gate; dynamic exclusive-OR gate; field effect transistor; full swing operation; gate-induced Si island single-electron transistor; logic output voltage; multi-gate single-electron logic circuit;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020345
  • Filename
    1006800
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=757555