Title :
A novel 0.1 μm MOSFET structure with inverted sidewall and recessed channel
Author :
Jeongho Lyu ; Byung-Gook Park ; Chun, K. ; Jong Duk Lee
Author_Institution :
Dept. of Electron. Eng., Seoul Nat. Univ., South Korea
fDate :
4/1/1996 12:00:00 AM
Abstract :
To solve the problems of trade-off between the short channel effect and the performance enhancement of sub-quartermicrometer MOSFETs, we have developed a recessed channel MOSFET structure called ISRC (Inverted-Sidewall Recessed-Channel). The oxide thickness is 4 nm and the effective channel length is 0.1 μm, which is the smallest Si-MOSFET ever reported in the recessed channel structures. The maximum saturation transconductance at V/sub D/=2 V is 446 mS/mm for the 0.1 μm n-channel device. The threshold voltage roll-off is kept within 64 mV when the gate length varies from 1.4 μm to 0.1 μm and good subthreshold characteristics are achieved for 0.1 μm channel device.
Keywords :
MOSFET; capacitance; characteristics measurement; doping profiles; elemental semiconductors; semiconductor device reliability; semiconductor doping; silicon; 0.1 micron; 2 V; ISRC; MOSFET structure; Si; effective channel length; gate length; inverted sidewall; maximum saturation transconductance; oxide thickness; performance enhancement; recessed channel; subthreshold characteristics; threshold voltage roll-off; Doping; Etching; FETs; Lithography; MOSFET circuits; Oxidation; Space technology; Strips; Threshold voltage; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
