Measurement of a cross-section for single-event gate rupture in power MOSFETs

Author

Mouret, I. ; Calvel, P. ; Allenspach, M. ; Titus, J.L. ; Wheatley, C.F. ; LaBel, K.A. ; Calvet, M.-C. ; Schrimpf, R.D. ; Galloway, K.F.

Author_Institution

Arizona Univ., Tucson, AZ, USA

Volume

17

Issue

4

fYear

1996

fDate

4/1/1996 12:00:00 AM

Firstpage

163

Lastpage

165

Abstract

The heavy-ion fluence required to induce Single-Event Gate Rupture (SEGR) in power MOSFETs is measured as a function of the drain bias, V/sub DS/, and as a function of the gate bias, V/sub GS/. These experiments reveal the abrupt nature of the SEGR-voltage threshold. In addition, the concepts of cross-section, threshold, and saturation in the SEGR phenomenon are introduced. This experimental technique provides a convenient method to quantify heavy-ion effects in power MOSFETs.

Keywords

cosmic ray interactions; ion beam effects; ion beams; power MOSFET; semiconductor device reliability; semiconductor device testing; space vehicle electronics; cosmic ray environment; cross-section measurement; drain bias; gate bias; heavy-ion fluence; power MOSFET; saturation; single-event gate rupture; space applications; threshold; Cranes; Degradation; Electrodes; FETs; MOSFET circuits; NASA; Power MOSFET; Power measurement; Power transistors; Single event upset;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.485161

Filename

485161