Title :
A resonant-cavity, separate-absorption-and-multiplication, avalanche photodiode with low excess noise factor
Author :
Anselm, K.A. ; Murtaza, S.S. ; Hu, C. ; Nie, H. ; Streetman, B.G. ; Campbell, J.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fDate :
3/1/1996 12:00:00 AM
Abstract :
We report on the design, fabrication, and performance of a photodiode that combines the advantages of a resonant cavity with a separate-absorption-and-multiplication avalanche photodiode. The device is grown on GaAs using molecular beam epitaxy and is designed to detect light near 900 nm. This photodetector has exhibited the following characteristics: an external quantum efficiency of 70%, a spectral linewidth of less than 7 nm, an avalanche gain in excess of 30, and low dark current. In addition, a low excess noise factor corresponding to 0.2/spl les/k/spl les/0.3 has been achieved.
Keywords :
avalanche photodiodes; photodetectors; semiconductor device noise; 70 percent; 900 nm; GaAs; avalanche gain; dark current; design; excess noise factor; external quantum efficiency; fabrication; molecular beam epitaxy; photodetector; resonant-cavity; separate-absorption-and-multiplication avalanche photodiode; spectral linewidth; Absorption; Avalanche photodiodes; Dark current; Fabrication; Gallium arsenide; Integrated circuit noise; Molecular beam epitaxial growth; Optical noise; Photodetectors; Resonance;
Journal_Title :
Electron Device Letters, IEEE
