• DocumentCode
    757913
  • Title

    An exclusive-nor based on resonant interband tunneling FET´s

  • Author

    Shen, J. ; Tehrani, S. ; Goronkin, H. ; Kramer, G. ; Tsui, R.

  • Author_Institution
    Corp. Res. Lab., Motorola Inc., Phoenix, AZ, USA
  • Volume
    17
  • Issue
    3
  • fYear
    1996
  • fDate
    3/1/1996 12:00:00 AM
  • Firstpage
    94
  • Lastpage
    96
  • Abstract
    We have proposed and demonstrated an XNOR device based on the negative differential resistance in a resonant interband tunneling diode and the current control capabilities of field effect transistors. DC and timing measurements have confirmed the operations of the device. Simulations and discussions will be presented.
  • Keywords
    logic gates; negative resistance devices; resonant tunnelling transistors; DC measurements; XNOR device; current control; exclusive-nor; negative differential resistance; resonant interband tunneling FET; simulation; timing measurements; FETs; Gallium arsenide; Indium gallium arsenide; Logic devices; Resistors; Resonance; Resonant tunneling devices; Semiconductor diodes; Virtual colonoscopy; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.485178
  • Filename
    485178
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=757913