Title :
An exclusive-nor based on resonant interband tunneling FET´s
Author :
Shen, J. ; Tehrani, S. ; Goronkin, H. ; Kramer, G. ; Tsui, R.
Author_Institution :
Corp. Res. Lab., Motorola Inc., Phoenix, AZ, USA
fDate :
3/1/1996 12:00:00 AM
Abstract :
We have proposed and demonstrated an XNOR device based on the negative differential resistance in a resonant interband tunneling diode and the current control capabilities of field effect transistors. DC and timing measurements have confirmed the operations of the device. Simulations and discussions will be presented.
Keywords :
logic gates; negative resistance devices; resonant tunnelling transistors; DC measurements; XNOR device; current control; exclusive-nor; negative differential resistance; resonant interband tunneling FET; simulation; timing measurements; FETs; Gallium arsenide; Indium gallium arsenide; Logic devices; Resistors; Resonance; Resonant tunneling devices; Semiconductor diodes; Virtual colonoscopy; Voltage;
Journal_Title :
Electron Device Letters, IEEE
