Title :
Characterization of polysilicon-gate depletion in MOS structures
Author :
Riccò, B. ; Versari, R. ; Esseni, D.
Author_Institution :
Dept. of Electron., Bologna Univ., Italy
fDate :
3/1/1996 12:00:00 AM
Abstract :
This paper presents a new technique to characterize the depletion capacitance and (active) impurity concentration of gate polysilicon in MOS transistors. The method has been validated by means of 2-D simulation; experimental results obtained with state-of-the-art n-channel 0.5 micrometer transistors are presented.
Keywords :
MOSFET; capacitance; silicon; 2D simulation; MOS transistors; active impurity concentration; depletion capacitance; n-channel transistors; polysilicon gate; CMOS technology; Capacitance measurement; Data mining; Doping; Impurities; MOSFETs; Monitoring; Numerical simulation; Semiconductor process modeling; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
