Modeling of the critical current density of bipolar transistors with retrograde collector doping profile

Author

Lee, Jong-Ho ; Kang, Won-Gu ; Lyu, Jong-Son ; Lee, Jong Duk

Author_Institution

Dept. of Electron. Mater., Wonkwang Univ., Iksan, South Korea

Volume

17

Issue

3

fYear

1996

fDate

3/1/1996 12:00:00 AM

Firstpage

109

Lastpage

111

Abstract

Advanced bipolar transistors used for high speed integrated circuits tend to drive high current density. As a result, base-widening occurs and device performance degrades. One of the methods to alleviate the base-widening is to form retrograde collector profiles. In this paper, we have derived for the first time the model of the critical current density of bipolar transistors with retrograde collector profiles. To verify the model, we performed extensively device simulation for two different collector profiles. Results from the model were compared with those of device simulation. The model derived shows a good agreement with device simulation over a V/sub CB/ bias range of 1-4 V.

Keywords

bipolar transistors; doping profiles; semiconductor device models; 1 to 4 V; base-widening; bipolar transistor; critical current density; device simulation; high speed integrated circuits; model; retrograde collector doping profile; Bipolar transistor circuits; Bipolar transistors; Critical current density; Current density; Degradation; Doping profiles; Electrons; Equations; High speed integrated circuits; Semiconductor process modeling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.485183

Filename

485183