Extreme ultraviolet source radiated from pinch plasma for semiconductor manufacturing

Author

Zhang, C.H. ; Katsuki, S. ; Akiyama, H. ; Xu, D.G.

Author_Institution

Dept. of Electr. Eng., Harbin Inst. of Technol.

Volume

1

Issue

2

fYear

2006

fDate

12/1/2006 12:00:00 AM

Firstpage

99

Lastpage

102

Abstract

Plasma extreme ultraviolet (EUV) source is regarded as the most promising source of EUV radiation as intensive research is underway over the world. A top priority issue for implementing EUV lithography is to upgrade the EUV power extensively. In the development of Z-pinch plasma EUV source, xenon gas is used for the target. The Z-pinch plasma was driven by pulsed current with an amplitude of 30 kA and pulse duration of 100 ns. Pinhole imaging, EUV spectrograph and an in-band EUV energy monitor were used to characterise the EUV emission from the Z-pinch discharge plasma. In order to improve the conversion efficiency (CE) from input electric energy to EUV radiation, a solid tin rod was also used as target material. The experimental analyses have demonstrated that the CE was as high as 1.5%

Keywords

Z pinch; plasma diagnostics; plasma materials processing; plasma sources; semiconductor device manufacture; ultraviolet lithography; ultraviolet sources; 100 ns; 30 kA; EUV lithography; EUV power; EUV radiation; EUV spectrograph; Z-pinch; conversion efficiency; extreme ultraviolet source; in-band EUV energy monitor; pinch plasma; pinhole imaging; pulsed current; semiconductor manufacturing; xenon gas;

fLanguage

English

Journal_Title

Micro & Nano Letters, IET

Publisher

iet

ISSN

1750-0443

Type

jour

Filename

4140879