Extreme ultraviolet source radiated from pinch plasma for semiconductor manufacturing

Plasma extreme ultraviolet (EUV) source is regarded as the most promising source of EUV radiation as intensive research is underway over the world. A top priority issue for implementing EUV lithography is to upgrade the EUV power extensively. In the development of Z-pinch plasma EUV source, xenon gas is used for the target. The Z-pinch plasma was driven by pulsed current with an amplitude of 30 kA and pulse duration of 100 ns. Pinhole imaging, EUV spectrograph and an in-band EUV energy monitor were used to characterise the EUV emission from the Z-pinch discharge plasma. In order to improve the conversion efficiency (CE) from input electric energy to EUV radiation, a solid tin rod was also used as target material. The experimental analyses have demonstrated that the CE was as high as 1.5%