High speed p-type SiGe modulation-doped field-effect transistors

Author

Arafa, M. ; Fay, P. ; Ismail, K. ; Chu, J.O. ; Meyerson, B.S. ; Adesida, I.

Author_Institution

Dept. of Electr. Eng., Illinois Univ., Urbana, IL, USA

Volume

17

Issue

3

fYear

1996

fDate

3/1/1996 12:00:00 AM

Firstpage

124

Lastpage

126

Abstract

We report on the fabrication and characterization of high-speed p-type modulation-doped field-effect transistors (MODFETs) with 0.7-μm and 1-μm gate-lengths having unity current-gain cut-off frequencies (f_T) of 9.5 GHz and 5.3 GHz, respectively. The devices were fabricated on a high hole mobility SiGe heterostructure grown by ultra-high-vacuum chemical vapor deposition (UHV-CVD). The dc maximum extrinsic transconductance (g/sub m/) is 105 mS/mm (205 mS/mm) at room temperature (77 K) for the 0.7-μm gate length devices. The fabricated devices show good pinch-off characteristics and have a very low gate leakage current of a few μA/mm at room temperature and a few nA/mm at 77 K.

Keywords

Ge-Si alloys; high electron mobility transistors; semiconductor materials; 0.7 micron; 1 micron; 5.3 GHz; 9.5 GHz; DC maximum extrinsic transconductance; SiGe; fabrication; gate-lengths; high hole mobility SiGe heterostructure; high speed p-type SiGe modulation-doped field-effect transistors; leakage current; pinch-off characteristics; ultra-high-vacuum chemical vapor deposition; unity current-gain cut-off frequencies; Chemical vapor deposition; Cutoff frequency; Epitaxial layers; FETs; Fabrication; Germanium silicon alloys; HEMTs; MODFETs; Silicon germanium; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.485188

Filename

485188