Title :
Multiple negative-differential-resistance (NDR) of InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT)
Author :
Liu, Wen-Chau ; Tsai, Jung-Hui ; Lour, Wen-Shiung ; Laih, Lih-Wen ; Thei, Kong- Beng ; Wu, Cheng-Zu
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
3/1/1996 12:00:00 AM
Abstract :
An interesting multiple S-shaped negative-differential-resistance (NDR) phenomenon is observed for an InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) under the inverted operation mode. This behavior results from a sequential avalanche multiplication and two-stage barrier lowering effect. The two-stage barrier lowering effect is assumed to be caused by the high valence-band-discontinuity (/spl Delta/E/sub v/) to conduction-band-discontinuity (/spl Delta/E/sub c/) ratio at InGaP/GaAs heterointerface which gives holes and electrons accumulation effect successively. Under normal operation mode, a typical common-emitter current gain of 60 is obtained at collector current density of 400 A/cm/sup 2/ for the studied HEBT without emitter-edge thinning structure. Consequently, the controlled switching and transistor performances provide a promise of the studied device for circuit applications.
Keywords :
III-V semiconductors; avalanche breakdown; carrier density; characteristics measurement; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; negative resistance devices; HEBT; InGaP-GaAs; S-shaped NDR phenomenon; carrier accumulation effect; collector current density; common-emitter current gain; conduction-band-discontinuity; controlled switching; heterostructure-emitter bipolar transistor; inverted operation mode; multiple negative-differential-resistance; sequential avalanche multiplication; two-stage barrier lowering effect; valence-band-discontinuity; Bipolar transistors; Charge carrier processes; Current density; Etching; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Sea surface; Voltage;
Journal_Title :
Electron Device Letters, IEEE
