AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power applications

Author

Nguyen, Chanh ; Liu, Takyiu ; Chen, Mary ; Sun, Hsiang-Chih ; Rensch, David

Author_Institution

Hughes Res. Labs., Malibu, CA, USA

Volume

17

Issue

3

fYear

1996

fDate

3/1/1996 12:00:00 AM

Firstpage

133

Lastpage

135

Abstract

We report the performance of an AlInAs/GaInAs/InP DHBT with a new collector design. The base-collector junction was formed with an all arsenide chirped superlattice with linear variation in the average composition. A doping dipole was inserted at the ends of the superlattice to cancel the quasielectric field. The conduction band offset between AlInAs and InP enabled hot electrons to be launched into the InP collector. The new design resulted in an excellent combination of speed and breakdown voltage with superior microwave power performance at X-band. Output power of 2 W (5.6 W/mm) with 70% power-added-efficiency at 9 GHz was achieved.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; hot carriers; indium compounds; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor superlattices; 2 W; 70 percent; 9 GHz; AlInAs-GaInAs-InP; DHBT; X-band; base-collector design; breakdown voltage; chirped superlattice; conduction band offset; doping dipole; double heterojunction bipolar transistor; hot electrons; microwave power performance; power applications; power-added-efficiency; quasielectric field; Doping; Double heterojunction bipolar transistors; Electrons; Impact ionization; Indium phosphide; Photonic band gap; Power generation; Quasi-doping; Superlattices; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.485191

Filename

485191