Surface Passivation Effect on CZT-Metal Contact

Author

Park, S.H. ; Ha, J.H. ; Cho, Y.H. ; Kim, H.S. ; Kang, S.M. ; Kim, Y.K. ; Kim, J.K.

Author_Institution

Korea Atomic Energy Res. Inst., Daejeon

Volume

55

Issue

3

fYear

2008

fDate

6/1/2008 12:00:00 AM

Firstpage

1547

Lastpage

1550

Abstract

The process of cadmium zinc telluride (CZT) surface passivation is very important to reduce the leakage current of the detector and to improve the detector performance. NH₄/H₂O₂ solution was identified as an effective passivation agent for CZT. We fabricated a CZT planar detector and measured the detector performances before and after the NH₄/H₂O₂ passivation. For the first time, the passivation effect on CZT-metal contact was measured. The depth profile of the chemical composition of metal contact was measured with AES to understand the change of the CZT detector performance with passivation.

Keywords

II-VI semiconductors; cadmium compounds; leakage currents; passivation; semiconductor counters; semiconductor-metal boundaries; zinc compounds; CZT planar detector; CZT-metal contact; CdZnTe; NH₄-H₂O₂ solution; cadmium zinc telluride; leakage current; surface passivation effect; Chemicals; Conductivity; Detectors; Leak detection; Leakage current; Passivation; Power engineering and energy; Sputter etching; Surface treatment; Zinc compounds; Cadmium zinc telluride (CZT); leakage current; metal-semiconductor contact; surface passivation;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2007.914934

Filename

4545194