DocumentCode :
758195
Title :
Demonstration of 3.5 μm Ga1-xInxSb/InAs superlattice diode laser
Author :
Hasenberg, T.C. ; Chow, D.H. ; Kost, A.R. ; Miles, R.H. ; West, L.
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
Volume :
31
Issue :
4
fYear :
1995
fDate :
2/16/1995 12:00:00 AM
Firstpage :
275
Lastpage :
276
Abstract :
A demonstration of a semiconductor diode laser based on a type-II Ga 1-xInxSb/InAs superlattice active layer is reported. The laser structure uses InAs/AlSb superlattice cladding layers and a multiquantum well active layer with GaInAsSb barriers and Ga1-xInxSb/InAs-superlattice wells. An emission wavelength of 3.47 μm for pulsed operation up to 160 K is observed
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser tuning; quantum well lasers; semiconductor superlattices; 160 K; 3.47 micrometre; Ga1-xInxSb/InAs; GaInSb-InAs; InAs/AlSb superlattice cladding layers; emission wavelength; laser structure; multiquantum well active layer; pulsed operation; semiconductor diode laser; superlattice active layer;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19950221
Filename :
375800
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=758195
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