• DocumentCode
    758195
  • Title

    Demonstration of 3.5 μm Ga1-xInxSb/InAs superlattice diode laser

  • Author

    Hasenberg, T.C. ; Chow, D.H. ; Kost, A.R. ; Miles, R.H. ; West, L.

  • Author_Institution
    Hughes Res. Labs., Malibu, CA, USA
  • Volume
    31
  • Issue
    4
  • fYear
    1995
  • fDate
    2/16/1995 12:00:00 AM
  • Firstpage
    275
  • Lastpage
    276
  • Abstract
    A demonstration of a semiconductor diode laser based on a type-II Ga 1-xInxSb/InAs superlattice active layer is reported. The laser structure uses InAs/AlSb superlattice cladding layers and a multiquantum well active layer with GaInAsSb barriers and Ga1-xInxSb/InAs-superlattice wells. An emission wavelength of 3.47 μm for pulsed operation up to 160 K is observed
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; laser tuning; quantum well lasers; semiconductor superlattices; 160 K; 3.47 micrometre; Ga1-xInxSb/InAs; GaInSb-InAs; InAs/AlSb superlattice cladding layers; emission wavelength; laser structure; multiquantum well active layer; pulsed operation; semiconductor diode laser; superlattice active layer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950221
  • Filename
    375800
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=758195