Title :
3 V, 28 mW Si-bipolar front-end IC for 900 MHz homodyne wireless receivers
Author :
Wang, HongMo ; Banu, M.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
2/16/1995 12:00:00 AM
Abstract :
A 900 MHz homodyne receiver front-end bipolar chip is presented. The circuit consists of a low-noise amplifier and two double-balanced mixers for in-phase and quadrature channels. The power supply voltage is 3 V and power dissipation is 28 mW. The measured performance includes 33.5 dB voltage gain, a 3.1 dB noise figure, -13 dBm input referred IP3, -95 dB LO leakage into the RF port on wafer probing, and less than 0.1 dB I/Q magnitude imbalance
Keywords :
UHF amplifiers; UHF integrated circuits; UHF mixers; bipolar MMIC; bipolar analogue integrated circuits; digital radio; elemental semiconductors; paging communication; radio receivers; silicon; 28 mW; 3 V; 3.1 dB; 33.5 dB; 900 MHz; I/Q magnitude imbalance; LO leakage; RF port; Si; bipolar front-end IC; double-balanced mixers; homodyne wireless receivers; in-phase channels; low-noise amplifier; noise figure; power dissipation; power supply voltage; quadrature channels; voltage gain; wafer probing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950197
