Title :
Thermal stability of deuterium in InAlN and InAlGaN
Author :
Pearton, S.J. ; Abernathy, C.R. ; MacKenzie, J.D. ; Wilson, R.G. ; Ren, F. ; Zavada, J.M.
Author_Institution :
Dept. of Mater. Sci. & Eng., Florida Univ., Gainesville, FL, USA
fDate :
2/16/1995 12:00:00 AM
Abstract :
Deuterium concentrations of ⩾1021 cm-3 can be introduced into epitaxial InAlN and InAlGaN by plasma exposure at 250°C. This produces a decrease of approximately a factor of 10 in the n-type carrier concentration in these materials, but can be reversed by annealing at ~500°C. Reactivation occurs with an apparent activation energy of ~2.4 eV. Annealing at 900°C is required to remove >90% of the deuterium from both nitride materials
Keywords :
III-V semiconductors; aluminium compounds; annealing; carrier density; deuterium; gallium compounds; impurities; indium compounds; semiconductor epitaxial layers; 250 degC; 500 degC; 900 degC; D thermal stability; InAlGaN:D; InAlN:D; activation energy; annealing; n-type carrier concentration; nitride materials; plasma exposure; reactivation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950194
