DocumentCode
758504
Title
Direct measurement of doping density and barrier lowering effect with bias in quantum wells
Author
Xu, Y. ; Shakouri, A. ; Yariv, A. ; Krabach, T. ; Dejewski, S.
Author_Institution
Dept. of Appl. Phys., California Inst. of Technol., Pasadena, CA, USA
Volume
31
Issue
4
fYear
1995
fDate
2/16/1995 12:00:00 AM
Firstpage
320
Lastpage
321
Abstract
An experimental method for determining the doping density in thin-sheet semiconductor material such as quantum wells (QWs) is demonstrated in GaAs/AlGaAs multiquantum-well infra-red photodetectors. The results agree very well with the conventional Hall measurement method. Barrier lowering effect with bias in QWs is determined experimentally
Keywords
III-V semiconductors; aluminium compounds; doping profiles; gallium arsenide; infrared detectors; semiconductor doping; semiconductor quantum wells; GaAs-AlGaAs; GaAs/AlGaAs; barrier lowering effect; bias; doping density; multiquantum-well infra-red photodetectors; quantum wells; thin-sheet semiconductor material;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950180
Filename
375831
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