Title :
Direct determination of source, drain and channel resistances of HEMTs
Author :
Zhu, Y. ; Ishimaru, Yasuo ; Shimizu, M.
Author_Institution :
Central Res. Labs., Sharp Corp., Nara, Japan
fDate :
2/16/1995 12:00:00 AM
Abstract :
A novel model describing the distribution of channel current in HEMTs is proposed, yielding a simple way to determine the source, drain and channel resistances of the device. The resistances can be deduced directly from measurement of the device I/V characteristics in three different configurations
Keywords :
electric resistance; equivalent circuits; high electron mobility transistors; semiconductor device models; HEMTs; channel current distribution; channel resistance; device I/V characteristics; drain resistance; source resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950198
