• DocumentCode
    758529
  • Title

    High extinction ratio GaAs/AlGaAs electroabsorption modulators integrated with passive waveguides using impurity-free vacancy diffusion

  • Author

    Cusumano, P. ; Krauss, T. ; Marsh, J.H.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
  • Volume
    31
  • Issue
    4
  • fYear
    1995
  • fDate
    2/16/1995 12:00:00 AM
  • Firstpage
    315
  • Lastpage
    317
  • Abstract
    Electroabsorption optical modulators integrated with passive waveguides have been fabricated on GaAs/AlGaAs multiquantum well material using the impurity-free vacancy diffusion technique with SrF 2 and SiO2 capping layers. At a wavelength of 861.6 nm, devices with a 400 μm long modulator section showed ON/OFF ratios greater than 35 dB for a reverse bias voltage of 3 V
  • Keywords
    III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; integrated optics; optical fabrication; optical waveguides; 3 V; 861.6 nm; GaAs-AlGaAs; MQW; SiO2; SiO2 capping layer; SrF2; SrF2 capping layer; electroabsorption modulators; high extinction ratio; impurity-free vacancy diffusion; multiquantum well material; optical modulators; passive waveguides; reverse bias voltage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950169
  • Filename
    375834
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=758529