Title :
(GaAl)As SQW superluminescent diodes with extremely low coherence length
Author :
Semenov, A.T. ; Batovrin, V.K. ; Garmash, L.A. ; Shidlovsky, V.R. ; Shramenko, M.V. ; Yakubovich, S.D.
Author_Institution :
Superlum Ltd., Moscow, Russia
fDate :
2/16/1995 12:00:00 AM
Abstract :
Superluminescent diodes (SLDs) based on (AlGa)As single quantum well separate confinement heterostructures have been fabricated. The dependencies of their output power and spectrum on active channel length, pumping level and temperature were studied. Using combined pulsed/DC pumping an average spectrum width of 98 nm was obtained. A visibility function FWHM of 5.5 μm and 1/e2 width of 9.5 μm were recorded
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor quantum wells; superluminescent diodes; 820 nm; AlGaAs; SQW SCH type; SQW superluminescent diodes; active channel length; combined pulsed/DC pumping; low coherence length; output power; pumping level; separate confinement heterostructures; single quantum well; temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950214
