DocumentCode :
75854
Title :
Dielectric-Band Photonic Crystal Nanobeam Lasers
Author :
Lee, Po-Tsung ; Lu, Tsan-Wen ; Chiu, Li-Hsun
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
31
Issue :
1
fYear :
2013
fDate :
Jan.1, 2013
Firstpage :
36
Lastpage :
42
Abstract :
We investigate a mode gap confined dielectric band laser via a 1-D photonic crystal (PhC) nanobeam (NB) nanocavity with lattice gradually shifted PhC mirror. Owing to different modal symmetries, different zeroth-order dielectric mode properties, including quality (Q) factors, mode volumes, lasing thresholds, and slope efficiencies, in nanocavities with two different cavity sizes are investigated. In experiments, single-mode lasing from dielectric bands with low effective lasing thresholds is obtained. Rising of the high-order modes is also observed when we increase the PhC mirror periods for high Q factor of the zeroth-order dielectric mode. In addition, we observe the bonding and antibonding modes in beamwidth mismatched coupled NB nanocavities and switch the dominant lasing mode via spatially nonuniform carrier injection.
Keywords :
Q-factor; laser beams; laser cavity resonators; laser mirrors; laser modes; nanophotonics; photonic crystals; semiconductor lasers; 1D PhC NB nanocavity; 1D photonic crystal nanobeam nanocavity; antibonding modes; beamwidth mismatched coupled NB nanocavities; bonding modes; cavity sizes; dielectric-band photonic crystal nanobeam lasers; high Q factor; high-order modes; lattice gradually shifted PhC mirror; low effective lasing thresholds; modal symmetries; mode gap confined dielectric band laser; mode volumes; quality factors; single-mode lasing; slope efficiencies; spatially nonuniform carrier injection; zeroth-order dielectric mode; zeroth-order dielectric mode properties; Bonding; Cavity resonators; Dielectrics; Lasers; Lattices; Mirrors; Niobium; Photonic crystal (PhC); nanobeam (NB); nanocavity; semiconductor laser;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.2012.2229695
Filename :
6361416
Link To Document :
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